Influence of Inversion Symmetry on the Metallic Behaviour in a Dilute Two-dimensional Hole System
A. R. Hamilton, M. Y. Simmons, M. Pepper and D. A. Ritchie
Australian Journal of Physics 53(4) 523 - 530
Abstract
In the past five years numerous experimental studies of a wide variety of low
disorder two-dimensional (2D) semiconductor systems have revealed an
unexpectedly large decrease in the resistance as the temperature is lowered
from T ~ 1 K, suggesting the existence of a 2D
metal. Although numerous theories have been put forward to explain this
metallic-like behaviour (which contradicts the expectations of one parameter
scaling theory), its origins, and the question of whether it persists to
T = 0, are still subjects of great debate. We
present a detailed study of the influence of inversion symmetry on the
B = 0 metallic behaviour in a low density GaAs
hole gas close to the apparent two-dimensional metal—insulator
transition. The strength of the metallic behaviour (determined by the size of
the drop in resistance as T→ 0) is found to be
almost independent of the electric field across the hole gas, and is
predominantly determined by the magnitude of k
F l at low temperatures (i.e. by
the low temperature resistivity). These results suggest that the shape of the
potential well and spin—orbit effects alone cannot account for the
existence of metallic behaviour in low density, strongly interacting 2D
systems.
Full text doi:10.1071/PH00019
© CSIRO 2000






