Abstract

We investigate the metal—insulator transition in 2D electron systems assuming a percolation mechanism connecting through a network of metallic domains. The size of the domains is determined by the level of disorder and the strength of the electron correlations. The domains are linked through quantum tunneling. We determine the dependence of the resistivity on electron density and temperature by calculating the tunnelling transmission through the potential barriers between the domains. The results are in good agreement with recent experimental measurements.