
TY  - JOUR
A1  - Ladbrooke, PH 
A1  - Debuf, DR 
A1  - Nanayakkara, K 
A1  - Wilkins, DR 
T1  - Gallium Arsenide as a Competitor to Silicon for High-speed Amplification and Switching
JF  - Australian Journal of Physics
JO  - Aust. J.  Phys.
Y1  - 1982
VL  - 35
IS  - 6
SP  - 749
EP  - 760
KW  - 
UR  - https://doi.org/10.1071/PH820749 
N2  - A review is given of the physical and technological factors which affect the electrical behaviour of field-effect devices for high-speed applications. Ballistic electron transport is shown to lead to an electron transit time under the gate electrode which is shorter in GaAs than in Si field-effect transistors (FETs), providing a possible basis for exploitation of transport effects in high-speed devices. Some electrical characteristics of practical Si and GaAs field-effect structures are presented. 
ER  -

