
%0 Journal Article
%A WL Chin, Vincent 
%A M Newbery, Stephen 
%A WV Storey, John 
%A Theden, Ulrich 
%T The Effect of Sintering Temperature on the Barrier Height of p-type PtSi Schottky Diodes
%J Australian Journal of Physics
%D 1991/02/01
%V 44
%N 1
%P 67-72
%K 
%R https://doi.org/10.1071/PH910067
%U https://www.publish.csiro.au/paper/PH910067 
%X The effect of sintering temperature on the barrier height of p-type PtSi Schottky diodes is studied by electrical and infrared photoresponse methods. It is revealed that there is a consistent difference of about 0·06 eV for two samples sintered at different temperatures. 
