
TY  - JOUR
A1  - WL Chin, Vincent 
A1  - M Newbery, Stephen 
A1  - WV Storey, John 
A1  - Theden, Ulrich 
T1  - The Effect of Sintering Temperature on the Barrier Height of p-type PtSi Schottky Diodes
JF  - Australian Journal of Physics
JO  - Aust. J.  Phys.
Y1  - 1991
VL  - 44
IS  - 1
SP  - 67
EP  - 72
KW  - 
UR  - https://doi.org/10.1071/PH910067 
N2  - The effect of sintering temperature on the barrier height of p-type PtSi Schottky diodes is studied by electrical and infrared photoresponse methods. It is revealed that there is a consistent difference of about 0·06 eV for two samples sintered at different temperatures. 
ER  -

