
%0 Journal Article
%A Vaksey, AI 
%T Inhomogeneously Heated Electron Thermal Bottleneck in Semiconductors
%J Australian Journal of Physics
%D 1991/08/01
%V 44
%N 5
%P 535-544
%K 
%R https://doi.org/10.1071/PH910535
%U https://www.publish.csiro.au/paper/PH910535 
%X General phenomenological criteria for the OrIgm of the inhomogeneously heated electron thermal bottleneck in semiconductors are obtained. Different physical situations in solid-state physics are discussed in which the electron bottleneck is described in terms of multi-valued characteristics. A microscopic model of the electron bottleneck in layer semiconductors is suggested and investigated in detail. A novel phenomenon-the cold electon bottleneck in layer semiconductors-is predicted. It is shown that, unlike the hot electron bottleneck, the cold electron one manifests itself in the formation of two (one) S-N shaped or locked looptype sections on the current-voltage characteristics (CVC). Various methods of experimental detection of such bottlenecked eve are discussed. 
