
TY  - JOUR
A1  - Vaksey, AI 
T1  - Inhomogeneously Heated Electron Thermal Bottleneck in Semiconductors
JF  - Australian Journal of Physics
JO  - Aust. J.  Phys.
Y1  - 1991
VL  - 44
IS  - 5
SP  - 535
EP  - 544
KW  - 
UR  - https://doi.org/10.1071/PH910535 
N2  - General phenomenological criteria for the OrIgm of the inhomogeneously heated electron thermal bottleneck in semiconductors are obtained. Different physical situations in solid-state physics are discussed in which the electron bottleneck is described in terms of multi-valued characteristics. A microscopic model of the electron bottleneck in layer semiconductors is suggested and investigated in detail. A novel phenomenon-the cold electon bottleneck in layer semiconductors-is predicted. It is shown that, unlike the hot electron bottleneck, the cold electron one manifests itself in the formation of two (one) S-N shaped or locked looptype sections on the current-voltage characteristics (CVC). Various methods of experimental detection of such bottlenecked eve are discussed. 
ER  -

