
%0 Journal Article
%A Nanchang, Zhu 
%A W Stevenson, Andrew 
%A Runshen, Li 
%T Determination of the Unit Cell for an Epitaxial Layer of Hg1-xCdxTe Deposited on GaAs
%J Australian Journal of Physics
%D 1992/12/01
%V 45
%N 6
%P 773-780
%K 
%R https://doi.org/10.1071/PH920773
%U https://www.publish.csiro.au/paper/PH920773 
%X Stevenson et al. (1991) reported structural aspects of six metal organic chemical vapour deposition (MOCVD)-grown Hg1-xCdxTe epitaxial layers on novel GaAs substrates. Large layer miscuts (the angle between the surface and the Bragg planes of the nominal rientation) of 4·3° were reported for the samples of (311) and (3II) orientation, whereas the substrate miscuts were less than 1° (0·94° and 0·84° respectively). 
