
%0 Journal Article
%A Wang, Ke-Ming 
%A Shi, Bo-Rong 
%A Zhai, Hong-Ying 
%A Ma, Shi-Jie 
%A Liu, Xiang-Dong 
%A Liu, Ji-Tian 
%A Liu, Xi-Ju 
%T Mobility of Hg<sup>+</sup> and Br<sup>+</sup> Implanted in Quartz
%J Australian Journal of Physics
%D 1996/06/01
%V 49
%N 3
%P 705-712
%K 
%R https://doi.org/10.1071/PH960705
%U https://www.publish.csiro.au/paper/PH960705 
%X Both Hg+ and Br+ were implanted in quartz (Si02) 7 years ago. The mobilities of the implanted Hg+ and Br+ at room and higher temperatures are investigated by Rutherford backscattering of 2·1 MeV He2+ ions. The results show that both Hg+ and Br+ are still immobile at room temperature after 7 years. The depth distributions of Hg+ agree well with those calculated by the transport of ions in matter program (TRIM'90). However, for the case of Br+ the mean projected range is shallower than the TRIM'90 prediction with increasing implantation energy. It is found that 300 keV Hg+ and 250 keV Br+ are mobile after 6000&#176;C and 5000&#176;C annealing respectively. Both diffusion and evaporation during annealing are observed. 
