
%0 Journal Article
%A Neilson, D. 
%A Thakur, J. S. 
%T Continuous Localisation&#8211;Delocalisation Transition at Intermediate Electron Densities
%J Australian Journal of Physics
%D 1999/08/27
%V 52
%N 5
%P 779-789
%K 
%R https://doi.org/10.1071/PH99060
%U https://www.publish.csiro.au/paper/PH99060 
%X We find in 2D electron layers in quantum transistors that the interplay between the electron correlations and their interactions with defects in the semiconductor substrate generates a continuous localisation&#8211;delocalisation transition for intermediate electron densities (5 &lsim; rs &lsim; 9). We distinguish this transition from the discontinuous metal&#8211;insulator transition which is observed at lower electron densities (rs &gsim; 10). The approach we use is based on the behaviour of electrons at low densities. We take into account the interactions between electrons and also their interactions with disorder. We determine a zero temperature phase diagram of localised and delocalised states as a function of electron and impurity densities. The phase boundary of the continuous transition is determined by the localisation length of the electrons. 
