
TY  - JOUR
A1  - Neilson, D. 
A1  - Thakur, J. S. 
T1  - Continuous Localisation&#8211;Delocalisation Transition at Intermediate Electron Densities
JF  - Australian Journal of Physics
JO  - Aust. J.  Phys.
Y1  - 1999
VL  - 52
IS  - 5
SP  - 779
EP  - 789
KW  - 
UR  - https://doi.org/10.1071/PH99060 
N2  - We find in 2D electron layers in quantum transistors that the interplay between the electron correlations and their interactions with defects in the semiconductor substrate generates a continuous localisation&#8211;delocalisation transition for intermediate electron densities (5 &lsim; rs &lsim; 9). We distinguish this transition from the discontinuous metal&#8211;insulator transition which is observed at lower electron densities (rs &gsim; 10). The approach we use is based on the behaviour of electrons at low densities. We take into account the interactions between electrons and also their interactions with disorder. We determine a zero temperature phase diagram of localised and delocalised states as a function of electron and impurity densities. The phase boundary of the continuous transition is determined by the localisation length of the electrons. 
ER  -

