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Articles citing this paper

Atomic Arrangement of the Clean Si(110) 5x1 Surface Derived by Low Energy Scattering Spectroscopy

YG Shen, DJ O’Connor and RJ MacDonald
45(1) pp.85 - 98


6 articles found in Crossref database.

Thermal stability of trimethyl indium on Si(100)(2 × 1) as studied with HREELS, UPS and XPS: A comparison with the results from Si(111)(7 × 7) and Si(110) studies
Bu Y., Chu Jason C.S., Lin M.C.
Surface Science. 1993 285(3). p.243
Calculated energetics for adsorption and desorption steps during etching of Si(110) surface by Cl
Halicioglu Timur
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 2001 19(1). p.372
Scanning tunneling microscopy of in situ cleaved and hydrogen passivated Si(110) cross-sectional surfaces
Lutz M.A., Feenstra R.M., Chu J.O.
Surface Science. 1995 328(3). p.215
Si(110)-16×2 and Si(110)-5×1 surface reconstructions: Stretched-hexagon face-centered adatom model
Packard William E., Dow John D.
Physical Review B. 1997 55(23). p.15643
Studies of surface composition, structure and oxygen adsorption of Ni3Al(110) by Li+ and He+ ion scattering
Shen Y. G., O'Connor D. J., MacDonald R. J.
Surface and Interface Analysis. 1992 18(10). p.729
Adsorption and decomposition of trimethylindium on Si(110)
Bu Y., Chu Jason C.S., Shinn D.W., Lin M.C.
Materials Chemistry and Physics. 1993 33(1-2). p.99
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