Articles citing this paper
Redetermination of Absolute Structure Factors for Silicon at Room and Liquid Nitrogen Temperatures
S Cummings and M Hart
41(3) pp.423 - 432
31 articles found in Crossref database.
Electron density distribution in germanium from X-ray powder data by the maximum entropy method
Nakahigashi K.,
Higashimine K.,
Ishibashi H., Minamigawa S.
Journal of Physics and Chemistry of Solids. 1993 54(11). p.1543
Electronic stopping of Si from a three-dimensional charge distribution
Sillanpää J.,
Nordlund K., Keinonen J.
Physical Review B. 2000 62(5). p.3109
Electronic charge distribution in crystalline silicon
Deutsch Moshe
Physical Review B. 1992 45(2). p.646
The structures of silicon and germanium: Theory and experiment converge
Hart Michael, Deutsch Moshe
Physica A: Statistical Mechanics and its Applications. 1990 168(1). p.66
Charge Density of MgO: Implications of Precise New Measurements for Theory
Zuo J. M.,
O'Keeffe M.,
Rez P., Spence J. C. H.
Physical Review Letters. 1997 78(25). p.4777
Thermal motion of atoms in crystalline silicon: Beyond the Debye theory
Deutsch Moshe,
Hart Michael, Sommer-Larsen Peter
Physical Review B. 1989 40(17). p.11666
Comparison of Hartree-Fock and density functional theory structure factors and charge density in diamond, silicon and germanium
Pere Joël,
Gelizé-Duvignau Michel, Lichanot Albert
Journal of Physics: Condensed Matter. 1999 11(30). p.5827
Measurements of electron densities in solids: a real-space view of electronic structure and bonding in inorganic crystals
Zuo J M
Reports on Progress in Physics. 2004 67(11). p.2053
Electronic charge distribution in crystalline diamond, silicon, and germanium
Lu Z. W.,
Zunger Alex, Deutsch Moshe
Physical Review B. 1993 47(15). p.9385
The Application of Charge Density Research to Chemistry and Drug Design (1991)
Beyond Quasicrystals (1995)
Theory of bonding charge density in β′ NiAl
Lu Z.W.,
Wei S.-H., Zunger A.
Acta Metallurgica et Materialia. 1992 40(9). p.2155
Accurate structure factors from pseudopotential methods
Trail J. R., Bird D. M.
Physical Review B. 1999 60(11). p.7875
High-accuracy structure-factor measurements in germanium
Deutsch Moshe,
Hart Michael, Cummings Stewart
Physical Review B. 1990 42(2). p.1248
Advanced Transmission Electron Microscopy (2017)
Accurate charge densities from powder X-ray diffraction – a new version of the Aarhus vacuum imaging-plate diffractometer
Tolborg Kasper,
Jørgensen Mads R. V.,
Christensen Sebastian,
Kasai Hidetaka,
Becker Jacob,
Walter Peter,
Dippel Ann-Christin,
Als-Nielsen Jens, Iversen Bo B.
Acta Crystallographica Section B Structural Science, Crystal Engineering and Materials. 2017 73(4). p.521
The electronic structure of silicon
Deutsch Moshe
Physics Letters A. 1991 153(6-7). p.368
Simulation of thermal diffuse scattering including a detailed phonon dispersion curve
A. Muller David,
Edwards Byard,
J. Kirkland Earl, Silcox John
Ultramicroscopy. 2001 86(3-4). p.371
Accurate dynamical structure factors fromab initiolattice dynamics: The case of crystalline silicon
Erba Alessandro,
Ferrabone Matteo,
Orlando Roberto, Dovesi Roberto
Journal of Computational Chemistry. 2013 34(5). p.346
Comparison of experimental and theoretical electronic charge distribution in γ-TiAl
Lu Z.W.,
Zunger Alex, Fox A.G.
Acta Metallurgica et Materialia. 1994 42(12). p.3929
Structure factors and bonding in ΒNiAl
Fox A. G., Menon E. S. K.
Journal of Phase Equilibria. 1997 18(6). p.509
Structure factor measurement in TiAl and silicon
Swaminathan S.,
Wiezorek J. M.,
Jones I. P.,
Zaluzec N. J.,
Maher D. M., Fraser H. L.
Proceedings, annual meeting, Electron Microscopy Society of America. 1995 53 p.150
Pendellösung interferometry probes the neutron charge radius, lattice dynamics, and fifth forces
Heacock Benjamin,
Fujiie Takuhiro,
Haun Robert W.,
Henins Albert,
Hirota Katsuya,
Hosobata Takuya,
Huber Michael G.,
Kitaguchi Masaaki,
Pushin Dmitry A.,
Shimizu Hirohiko,
Takeda Masahiro,
Valdillez Robert,
Yamagata Yutaka, Young Albert R.
Science. 2021 373(6560). p.1239
Precise and accurate refinements of the 220 structure factor for silicon by the systematic-row CBED method
Swaminathan S.,
Altynov S.,
Jones I.P.,
Zaluzec N.J.,
Maher D.M., Fraser H.L.
Ultramicroscopy. 1997 69(3). p.169
Electronic stopping of silicon from a 3D charge distribution
Sillanpää J.
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. 2000 164-165 p.302
Determination of structure factors, lattice strains and accelerating voltage by energy-filtered convergent beam electron diffraction
Deininger C.,
Necker G., Mayer J.
Ultramicroscopy. 1994 54(1). p.15
The use of the form factor formalism in crystallography
Creagh D.C.
Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment. 1989 280(2-3). p.180
The theoretical charge density of silicon: experimental testing of exchange and correlation potentials
Zuo J M,
Blaha P, Schwarz K
Journal of Physics: Condensed Matter. 1997 9(36). p.7541
Synchrotron powder diffraction of silicon: high-quality structure factors and electron density
Wahlberg Nanna,
Bindzus Niels,
Bjerg Lasse,
Becker Jacob,
Dippel Ann-Christin, Iversen Bo Brummerstedt
Acta Crystallographica Section A Foundations and Advances. 2016 72(1). p.28
Assessment of the GLLB-SC potential for solid-state properties and attempts for improvement
Tran Fabien,
Ehsan Sohaib, Blaha Peter
Physical Review Materials. 2018 2(2).
Electronic charge distribution in crystalline germanium
Lu Z. W.,
Zunger Alex, Deutsch Moshe
Physical Review B. 1995 52(16). p.11904
