Articles citing this paper
Spectroscopic and Piezospectroscopic Studies of the Energy States of Boron in Silicon
RA Lewis, P Fisher and NA McLean
47(3) pp.329 - 360
8 articles found in Crossref database.
Isotopic effects in the infrared absorption spectra of electrically active impurities in silicon 28, 29, and 30 with high isotopic enrichment
Kotereva T. V.,
Gusev A. V.,
Gavva V. A., Kozyrev E. A.
Russian Microelectronics. 2013 42(8). p.453
Optical Absorption of Impurities and Defects in SemiconductingCrystals (2009)
New properties of boron-oxygen dimer defect in boron-doped Czochralski silicon
Khirunenko L. I.,
Sosnin M. G.,
Duvanskii A. V.,
Abrosimov N. V., Riemann H.
Journal of Applied Physics. 2022 132(13).
Optical Absorption of Impurities and Defects in SemiconductingCrystals (2009)
Shallow impurity absorption spectroscopy in isotopically enriched silicon
Steger M.,
Yang A.,
Karaiskaj D.,
Thewalt M. L. W.,
Haller E. E.,
Ager J. W.,
Cardona M.,
Riemann H.,
Abrosimov N. V.,
Gusev A. V.,
Bulanov A. D.,
Kaliteevskii A. K.,
Godisov O. N.,
Becker P., Pohl H.-J.
Physical Review B. 2009 79(20).
Optical Absorption of Impurities and Defects in SemiconductingCrystals (2009)
Photofield interface impurity spectroscopy in blocked impurity band Si:B structures
Pasquier S.,
Mény C.,
Asadauskas L.,
Léotin J.,
Aronzon B. A.,
Rylkov V. V.,
Conédéra V.,
Fabre N.,
Régolini J. L., Morin C.
Journal of Applied Physics. 1998 83(8). p.4222
Short lifetime components in the relaxation of boron acceptors in silicon
Saeedi K.,
Stavrias N.,
Redlich B.,
Riemann H.,
Abrosimov N. V.,
Becker P.,
Pohl H.-J.,
Thewalt M. L. W., Murdin B. N.
Physical Review B. 2018 97(12).
