Platinum Silicide/n-Silicon Photoelectrodes: Properties and Characteristics of the Platinum Silicide Layer

Abstract

The surface analysis of thermally grown platinum silicide layers on single crystal silicon wafers has shown that silicide phase growth can occur for thin films. The depth profile was found to depend upon the temperature at which the silicide was formed, the length of time for which the reaction proceeded and the supply of platinum.

The ESCA peaks for Pt and Si were shifted in energy from the elemental values in the silicide layer. A surface oxide, assigned as SiO₂ from the Si 2p signal, was detected on all samples. The platinum signal broadened considerably when the silicide layer had been largely removed by sputtering, and appeared to consist of two components.